Stretchability will significantly expand the applications scope of electronics, particularly for large-area electronic displays, sensors and actuators. Unlike for conventional devices, stretchable electronics can cover arbitrary surfaces and movable parts. However, a large hurdle is the manufacture of large-area highly stretchable electrical wirings with high conductivity. Here, we describe the manufacture of printable elastic conductors comprising single-walled carbon nanotubes (SWNTs) uniformly dispersed in a fluorinated rubber. Using an ionic liquid and jet-milling, we produce long and fine SWNT bundles that can form well-developed conducting networks in the rubber. Conductivity of more than 100 S cm(-1) and stretchability of more than 100% are obtained. Making full use of this extraordinary conductivity, we constructed a rubber-like stretchable active-matrix display comprising integrated printed elastic conductors, organic transistors and organic light-emitting diodes. The display could be stretched by 30-50% and spread over a hemisphere without any mechanical or electrical damage.

Our sense of touch enables us to recognize texture and shape and to grasp objects. The challenge in making an electronic skin which can emulate touch for applications such as a humanoid robot or minimally invasive and remote surgery is both in mimicking the (passive) mechanical properties of the dermis and the characteristics of the sensing mechanism, especially the intrinsic digital nature of neurons. Significant progress has been made towards developing an electronic skin by using a variety of materials and physical concepts, but the challenge of emulating the sense of touch remains. Recently, a nanodevice was developed that has achieved the resolution to decipher touch on a par with the human finger; this resolution is over an order of magnitude improvement on previous devices with a sensing area larger than 1 cm(2). With its robust mechanical properties, this new system represents an important step towards the realization of artificial touch.

By using an ionic liquid of 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, single-walled carbon nanotubes (SWNTs) were uniformly dispersed as chemically stable dopants in a vinylidene fluoride-hexafluoropropylene copolymer matrix to form a composite film. We found that the SWNT content can be increased up to 20 weight percent without reducing the mechanical flexibility or softness of the copolymer. The SWNT composite film was coated with dimethyl-siloxane-based rubber, which exhibited a conductivity of 57 S/cm and stretchability of 134 percent. Further, the elastic conductor was integrated with printed organic transistors to fabricate a rubber-like active matrix with an effective area of 20 x 20 square centimeters. The active matrix sheet can be uniaxially and biaxially stretched by 70 percent without mechanical or electrical damage. The elastic conductor allows for the construction of electronic integrated circuits, which can be mounted on any place, including arbitrary curved surfaces and movable parts such as the joints of a robot's arm.

Control over the composition, shape, spatial location and/or geometrical configuration of semiconductor nanostructures is important for nearly all applications of these materials. Here we report a mechanical strategy for creating certain classes of three-dimensional shapes in nanoribbons that would be difficult to generate in other ways. This approach involves the combined use of lithographically patterned surface chemistry to provide spatial control over adhesion sites, and elastic deformations of a supporting substrate to induce well-controlled local displacements. We show that precisely engineered buckling geometries can be created in nanoribbons of GaAs and Si in this manner and that these configurations can be described quantitatively with analytical models of the mechanics. As one application example, we show that some of these structures provide a route to electronics (and optoelectronics) with extremely high levels of stretchability (up to approximately 100%), compressibility (up to approximately 25%) and bendability (with curvature radius down to approximately 5 mm).

This article reviews the properties, fabrication and assembly of inorganic semiconductor materials that can be used as active building blocks to form high-performance transistors and circuits for flexible and bendable large-area electronics. Obtaining high performance on low temperature polymeric substrates represents a technical challenge for macroelectronics. Therefore, the fabrication of high quality inorganic materials in the form of wires, ribbons, membranes, sheets, and bars formed by bottom-up and top-down approaches, and the assembly strategies used to deposit these thin films onto plastic substrates will be emphasized. Substantial progress has been made in creating inorganic semiconducting materials that are stretchable and bendable, and the description of the mechanics of these form factors will be presented, including circuits in three-dimensional layouts. Finally, future directions and promising areas of research will be described.

We have developed a simple approach to high performance, stretchable, and foldable integrated circuits. The systems integrate inorganic electronic materials, including aligned arrays of nanoribbons of single crystalline silicon, with ultrathin plastic and elastomeric substrates. The designs combine multilayer neutral mechanical plane layouts and "wavy" structural configurations in silicon complementary logic gates, ring oscillators, and differential amplifiers. We performed three-dimensional analytical and computational modeling of the mechanics and the electronic behaviors of these integrated circuits. Collectively, the results represent routes to devices, such as personal health monitors and other biomedical devices, that require extreme mechanical deformations during installation/use and electronic properties approaching those of conventional systems built on brittle semiconductor wafers.

Endowing a textile substrate (i.e. fibers, yarns, fabrics) with active functions is a new powerful concept, that has recently given rise to several interesting contributions. In this paper, we will describe a possible approach to this intriguing objective, focusing on the technology and on the electronic model. Future applications for this technology will allow to obtain, for instance, matrices of sensors assembled by textile technology and will ensure to obtain for wearable devices the necessary properties of drapability and conformity to the body that are required for these applications.

We present detailed experimental and theoretical studies of the mechanics of thin buckled films on compliant substrates. In particular, accurate measurements of the wavelengths and amplitudes in structures that consist of thin, single-crystal ribbons of silicon covalently bonded to elastomeric substrates of poly(dimethylsiloxane) reveal responses that include wavelengths that change in an approximately linear fashion with strain in the substrate, for all values of strain above the critical strain for buckling. Theoretical reexamination of this system yields analytical models that can explain these and other experimental observations at a quantitative level. We show that the resulting mechanics has many features in common with that of a simple accordion bellows. These results have relevance to the many emerging applications of controlled buckling structures in stretchable electronics, microelectromechanical systems, thin-film metrology, optical devices, and others.

The electronics fields face serious problems associated with electric power; these include the development of ecologically friendly power-generation systems and ultralow-power-consuming circuits. Moreover, there is a demand for developing new power-transmission methods in the imminent era of ambient electronics, in which a multitude of electronic devices such as sensor networks will be used in our daily life to enhance security, safety and convenience. We constructed a sheet-type wireless power-transmission system by using state-of-the-art printing technologies using advanced electronic functional inks. This became possible owing to recent progress in organic semiconductor technologies; the diversity of chemical syntheses and processes on organic materials has led to a new class of organic semiconductors, dielectric layers and metals with excellent electronic functionalities. The new system directly drives electronic devices by transmitting power of the order of tens of watts without connectors, thereby providing an easy-to-use and reliable power source. As all of the components are manufactured on plastic films, it is easy to place the wireless power-transmission sheet over desks, floors, walls and any other location imaginable.

We demonstrate the use of self-assembly for the integration of freestanding micrometer-scale components, including single-crystal, silicon field-effect transistors (FETs) and diffusion resistors, onto flexible plastic substrates. Preferential self-assembly of multiple microcomponent types onto a common platform is achieved through complementary shape recognition and aided by capillary, fluidic, and gravitational forces. We outline a microfabrication process that yields single-crystal, silicon FETs in a freestanding, powder-like collection for use with self-assembly. Demonstrations of self-assembled FETs on plastic include logic inverters and measured electron mobility of 592 cm(2)/V-s. Finally, we extend the self-assembly process to substrates each containing 10,000 binding sites and realize 97% self-assembly yield within 25 min for 100-microm-sized elements. High-yield self-assembly of micrometer-scale functional devices as outlined here provides a powerful approach for production of macroelectronic systems.

Inverter circuits have been made by connecting two high-quality pentacene field-effect transistors. A uniform and pinhole-free 900 nm thick polyimide gate-insulating layer was formed on a flexible polyimide film with gold gate electrodes and partially removed by using a CO(2) laser drilling machine to make via holes and contact holes. Subsequent evaporation of the gold layer results in good electrical connection with a gold gate layer underneath the gate-insulating layer. By optimization of the settings of the CO(2) laser drilling machine, contact resistance can be reduced to as low as 3 Omega for 180 mum square electrodes. No degradation of the transport properties of the organic transistors was observed after the laser-drilling process. This study demonstrates the feasibility of using the laser drilling process for implementation of organic transistors in integrated circuits on flexible polymer films.

Skin-like sensitivity, or the capability to recognize tactile information, will be an essential feature of future generations of robots, enabling them to operate in unstructured environments. Recently developed large-area pressure sensors made with organic transistors have been proposed for electronic artificial skin (E-skin) applications. These sensors are bendable down to a 2-mm radius, a size that is sufficiently small for the fabrication of human-sized robot fingers. Natural human skin, however, is far more complex than the transistor-based imitations demonstrated so far. It performs other functions, including thermal sensing. Furthermore, without conformability, the application of E-skin on three-dimensional surfaces is impossible. In this work, we have successfully developed conformable, flexible, large-area networks of thermal and pressure sensors based on an organic semiconductor. A plastic film with organic transistor-based electronic circuits is processed to form a net-shaped structure, which allows the E-skin films to be extended by 25%. The net-shaped pressure sensor matrix was attached to the surface of an egg, and pressure images were successfully obtained in this configuration. Then, a similar network of thermal sensors was developed with organic semiconductors. Next, the possible implementation of both pressure and thermal sensors on the surfaces is presented, and, by means of laminated sensor networks, the distributions of pressure and temperature are simultaneously obtained.

The electronics fields face serious problems associated with electric power; these include the development of ecologically friendly power-generation systems and ultralow-power-consuming circuits. Moreover, there is a demand for developing new power-transmission methods in the imminent era of ambient electronics, in which a multitude of electronic devices such as sensor networks will be used in our daily life to enhance security, safety and convenience. We constructed a sheet-type wireless power-transmission system by using state-of-the-art printing technologies using advanced electronic functional inks. This became possible owing to recent progress in organic semiconductor technologies; the diversity of chemical syntheses and processes on organic materials has led to a new class of organic semiconductors, dielectric layers and metals with excellent electronic functionalities. The new system directly drives electronic devices by transmitting power of the order of tens of watts without connectors, thereby providing an easy-to-use and reliable power source. As all of the components are manufactured on plastic films, it is easy to place the wireless power-transmission sheet over desks, floors, walls and any other location imaginable.

Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (</=6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.

Stretchability will significantly expand the applications scope of electronics, particularly for large-area electronic displays, sensors and actuators. Unlike for conventional devices, stretchable electronics can cover arbitrary surfaces and movable parts. However, a large hurdle is the manufacture of large-area highly stretchable electrical wirings with high conductivity. Here, we describe the manufacture of printable elastic conductors comprising single-walled carbon nanotubes (SWNTs) uniformly dispersed in a fluorinated rubber. Using an ionic liquid and jet-milling, we produce long and fine SWNT bundles that can form well-developed conducting networks in the rubber. Conductivity of more than 100 S cm(-1) and stretchability of more than 100% are obtained. Making full use of this extraordinary conductivity, we constructed a rubber-like stretchable active-matrix display comprising integrated printed elastic conductors, organic transistors and organic light-emitting diodes. The display could be stretched by 30-50% and spread over a hemisphere without any mechanical or electrical damage.

By using an ionic liquid of 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, single-walled carbon nanotubes (SWNTs) were uniformly dispersed as chemically stable dopants in a vinylidene fluoride-hexafluoropropylene copolymer matrix to form a composite film. We found that the SWNT content can be increased up to 20 weight percent without reducing the mechanical flexibility or softness of the copolymer. The SWNT composite film was coated with dimethyl-siloxane-based rubber, which exhibited a conductivity of 57 S/cm and stretchability of 134 percent. Further, the elastic conductor was integrated with printed organic transistors to fabricate a rubber-like active matrix with an effective area of 20 x 20 square centimeters. The active matrix sheet can be uniaxially and biaxially stretched by 70 percent without mechanical or electrical damage. The elastic conductor allows for the construction of electronic integrated circuits, which can be mounted on any place, including arbitrary curved surfaces and movable parts such as the joints of a robot's arm.

A major obstacle to the development of organic transistors for large-area sensor, display, and circuit applications is the fundamental compromise between manufacturing efficiency, transistor performance, and power consumption. In the past, improving the manufacturing efficiency through the use of printing techniques has inevitably resulted in significantly lower performance and increased power consumption, while attempts to improve performance or reduce power have led to higher process temperatures and increased manufacturing cost. Here, we lift this fundamental limitation by demonstrating subfemtoliter inkjet printing to define metal contacts with single-micrometer resolution on the surface of high-mobility organic semiconductors to create high-performance p-channel and n-channel transistors and low-power complementary circuits. The transistors employ an ultrathin low-temperature gate dielectric based on a self-assembled monolayer that allows transistors and circuits on rigid and flexible substrates to operate with very low voltages.

Since bone resorption and formation by continuous and intermittent parathyroid hormone (PTH) treatments involve various types of cells in bone, this study examined the underlying mechanism by combining culture systems using mouse primary calvarial osteoblasts and bone marrow cells. The PTH/PTHrP receptor (PTH1R) expression and the cAMP accumulation in response to PTH were increased in accordance with the differentiation of osteoblasts. Osteoclast formation was strongly induced by continuous PTH treatment in the monolayer co-culture of osteoblasts and bone marrow cells, which was associated with RANKL expression in differentiated osteoblasts. Bone formation determined by ALP activity and the type I collagen mRNA expression was stimulated by intermittent PTH treatment in the monolayer co-culture and in the bone marrow cell layer of the separated co-culture in a double chamber dish, but not in the culture of bone marrow cells alone. The stimulation in the separated co-culture, accompanied by IGF-I production by osteoblasts, was abolished when bone marrow cells were derived from knockout mice of insulin-receptor substrate-1 (IRS-1-/-) or when osteoblasts were from PTH1R-/- mice. We conclude that differentiated osteoblasts are most likely the direct target of both continuous and intermittent PTH, while bone marrow cells are likely the effector cells. The osteoblasts stimulated by continuous PTH express RANKL which causes osteoclastogenesis from the precursors in bone marrow via cell-to-cell contact, leading to bone resorption; while the osteoblasts stimulated by intermittent PTH secrete IGF-I which activates IRS-1 in osteoblast precursors in bone marrow via a paracrine mechanism, leading to bone formation. J. Cell. Biochem.(c) 2010 Wiley-Liss, Inc.

We surveyed changes of the gene expression profile in caerulein-exposed pancreas using Affymetrix GeneChip system (39,000 genes). Up-regulation of genes coding for claudin 4, claudin 7, F11 receptor, cadherin 1, integrin beta 4, syndecan 1, heat shock proteins b1/90aa1, Serpinb6a, Serpinb6b, Serpinb9, Bax, Bak1, calpain 2, calpain 5, microtubule-associated protein 1 light chain 3 alpha, S100 calcium-binding proteins A4/A10 were found in mouse pancreas exposed to caerulein for 12h. In contrast, the anti-apoptotic gene Bcl2 was down-regulated. The functions of these genes concern tight junction formation, cell-cell/cell-matrix adhesions, stress response, protease inhibition, apoptosis, autophagy, and regulation of cytoskeletal dynamics. Caerulein-exposed pancreatic acinar cells were immunohistochemically stained for claudin 4, cadherin 1, integrin beta 4, heat shock protein b1, and Serpinb6a. In conclusion, we have newly identified a set of genes that are likely to be involved in endogenous self-protection mechanisms against acute pancreatitis.

BACKGROUND: The present study sought to identify dietary nutrients associated with the prevalence of radiographic knee osteoarthritis (OA) in the Japanese elderly of a population-based cohort of the Research on Osteoarthritis Against Disability (ROAD) study. METHODS: From the baseline survey of the ROAD study, 719 participants >/=60 years of age (270 men, 449 women) of a rural cohort were analyzed. Dietary nutrient intakes for the previous 1 month were assessed by a self-administered brief diet history questionnaire. The radiographic severity at both knees was determined by the Kellgren/Lawrence (KL) system. RESULTS: The prevalence of knee OA of KL >/=2 was 70.8%. Age, body mass index, and female sex were positively associated with the prevalence. Among the dietary factors, only vitamin K intake was shown to be inversely associated with the prevalence of radiographic knee OA by multivariate logistic regression analysis. The presence of joint space narrowing of the knee was also inversely associated with vitamin K intake. The prevalence of radiographic knee OA for each dietary vitamin K intake quartile decreased with the increased intake. CONCLUSIONS: The present cross-sectional study using a population-based cohort supports the hypothesis that low dietary vitamin K intake is a risk factor for knee OA. Vitamin K may have a protective role against knee OA and might lead to a disease-modifying treatment.

Organic electronic circuits based on a combination of n- and p-type transistors (so-called CMOS circuits) are attractive, since they promise the realization of a manifold of versatile and low-cost electronic devices. Here, we report a novel photoinduced transformation method, which allows for a particularly straightforward fabrication of highly functional organic CMOS circuits. A solution-deposited single-layer film, comprising a mixture of the n-type semiconductor [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) and the p-type semiconductor poly-3-hexylthiophene (P3HT) in a 3:1 mass ratio, was utilized as the common active material in an array of transistors. Selected film areas were exposed to laser light, with the result that the irradiated PCBM monomers were photochemically transformed into a low-solubility and high-mobility dimeric state. Thereafter, the entire film was developed via immersion into a developer solution, which selectively removed the nonexposed, and monomeric, PCBM component. The end result was that the transistors in the exposed film areas are n-type, as dimeric PCBM is the majority component in the active material, while the transistors in the nonexposed film areas are p-type, as P3HT is the sole remaining material. We demonstrate the merit of the method by utilizing the resulting combination of n-type and p-type transistors for the realization of CMOS inverters with a high gain of approximately 35.

Flexible electronic devices which are lightweight, thin and bendable have attracted increasing attention in recent years. In particular, solution processes have been spotlighted in the field of flexible electronics, since they provide the opportunity to fabricate flexible electronics using low-temperature processes at low-cost with high throughput. However, there are few reports which describe the characteristics of electronic devices on flexible substrates. In this study, we fabricated flexible thin-film transistors (TFTs) on plastic substrates with channel layers formed by the spin-coating of ZnO nanoparticles and investigated their electrical properties in the flat and bent states. To the best of our knowledge, this study is the first attempt to fabricate fully functional ZnO TFTs on flexible substrates through the solution process. The ZnO TFTs showed n-channel device characteristics and operated in enhancement mode. In the flat state, a representative ZnO TFT presented a very low field-effect mobility of 1.2 x 10(-5) cm(2) V(-1) s(-1), while its on/off ratio was as high as 1.5 x 10(3). When the TFT was in the bent state, some of the device parameters changed. The changes of the device parameters and the possible reasons for these changes will be described. The recovery characteristics of the TFTs after being subjected to cyclic bending will be discussed as well.

Preseparated, semiconductive enriched carbon nanotubes hold great potential for thin-film transistors and display applications due to their high mobility, high percentage of semiconductive nanotubes, and room-temperature processing compatibility. Here in this paper, we report our progress on wafer-scale processing of separated nanotube thin-film transistors (SN-TFTs) for display applications, including key technology components such as wafer-scale assembly of high-density, uniform separated nanotube networks, high-yield fabrication of devices with superior performance, and demonstration of organic light-emitting diode (OLED) switching controlled by a SN-TFT. On the basis of separated nanotubes with 95% semiconductive nanotubes, we have achieved solution-based assembly of separated nanotube thin films on complete 3 in. Si/SiO(2) wafers, and further carried out wafer-scale fabrication to produce transistors with high yield (>98%), small sheet resistance ( approximately 25 kOmega/sq), high current density ( approximately 10 muA/mum), and superior mobility ( approximately 52 cm(2) V(-1) s(-1)). Moreover, on/off ratios of >10(4) are achieved in devices with channel length L > 20 mum. In addition, OLED control circuit has been demonstrated with the SN-TFT, and the modulation in the output light intensity exceeds 10(4). Our approach can be easily scaled to large areas and could serve as critical foundation for future nanotube-based display electronics.

Organic thin film transistors (OTFT) are potentially very attractive for making portable and disposable DNA hybridization detection toolkits because of their ultra-low-cost manufacturing and potentially high sensitivity. To make a self-supported DNA sensor, we herein report an OTFT-based label-free DNA hybridization detection system integrating electrically read DNA hybridization sensors and microfluidic delivery channels. We previously reported DNA-doped OTFTs acting as electrically read DNA sensors. In this article, we first study physics of DNA sensitivity of OTFTs, clarifying the doping mechanism. The article also presents a method of verification of the immobilization and presence of DNA on the surface using TOF-SIMS analysis. As a further step, sources of variation of measured data and methods of minimization are discussed using a novel photolithography-based microfluidics fabrication method, directly enabling on-chip hybridization and self-supported DNA detection. By integrating the sensors with microfluidics, for the first time, we demonstrate necessary technologies required to realize disposable, rapid turn-around tools for field-deployable genetic diagnosis.

Flexible electronics sensors are designed and fabricated for tactile multiscanning and large area applications. The algorithm matrix is derived for multiscanning switch of tactile sensing. The thixotropy materials, bump, and resistance material are printed on the polyimide substrate. A gap between the top electrode and the resistance layers provides a buffer distance to increase the radius of curvature for large bending. Experiment results show that a flexible electronics sensor with a printed a resistance layer and an algorithm matrix performed the multiscanning functions. The membrane without a bump had a delay time of about 0.2 s at the transient response and took a longer time to reach the stable state after a force is applied. For printing thick structures on the flexible substrates, diffusion effects, and dimensional shrinkages can be reduced by using a thixotropy material with a high viscosity. The probability distribution density of the printed resistance values, a thickness of about 23.2 mum, at two standard deviations from the mean values is about 81.2%. Feasibility studies show that screen printing is appropriate for large area applications and is a low-cost technology for fabricating flexible electronics sensors.

Advancements in research and technology are happening now more than ever in the biotechnology industry. Better detection and treatment methods, specifically targeted towards personalized systems, are constantly being sought by researchers. Collaboration among different fields of science and technology has brought us one step closer towards achieving this goal. Recently, the use of pentacene thin film transistors as DNA hybridization detection systems has been demonstrated, leading to the possibility of their use in the implementation of electrically read low-cost DNA microarrays. Physical adsorptive immobilization, the mechanism through which DNA immobilizes on pentacene, highlights the importance of the topology of the pentacene film surface for immobilization of DNA and the sensitivity of the sensor. DNA is known to segregate to topological features on pentacene surface. We are able to exploit the control of pentacene evaporation conditions to tune pentacene film morphology to maximize sensitivity. In this paper, we demonstrate and analyze DNA detection using optimized films.

We investigated electrolyte-gated graphene field-effect transistors (GFETs) for electrical detecting pH and protein adsorptions. Nonfunctionalized single-layer graphene was used as a channel. GFETs immersed in an electrolyte showed transconductances 30 times higher than those in a vacuum and their conductances exhibited a direct linear increase with electrolyte pH, indicating their potential for use in pH sensor applications. We also attempted to direct surface-protein adsorption and showed that the conductance of GFETs increased with exposure to a protein at several hundred picomolar. The GFETs thus acted as highly sensitive electrical sensors for detecting pH and biomolecule concentrations.

Large area color sensor arrays based on vertically integrated thin-film sensors were realized. The complete color information of each color pixel is detected at the same position of the sensor array without using optical filters. The sensor arrays consist of amorphous silicon thin film color sensors integrated on top of amorphous silicon readout transistors. The spectral sensitivity of the sensors is controlled by the applied bias voltage. The operating principle of the color sensor arrays is described. Furthermore, the image quality and the pixel cross talk of the sensor arrays is analyzed by measurements of the line spread function and the modulation transfer function.